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Pinhole free thin film CdS deposited by chemical bath using a substrate reactive plasma treatment

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journal contribution
posted on 2013-10-21, 15:06 authored by Fabiana Lisco, Ali AbbasAli Abbas, Bianca Maniscalco, Piotr Kaminski, Maria Losurdo, Kevin BassKevin Bass, Gianfranco ClaudioGianfranco Claudio, Michael WallsMichael Walls
Achieving a pinhole-free CdS layer is necessary to produce high performance thin film CdTe solar cells. Pinholes in the CdS layer can compromise the efficiency of a CdTe solar cell by causing shunts. We have investigated the use of a plasma treatment of a fluorine doped tin oxide coated glass substrate (NSG TEC15) and its effect on pinhole reduction in thin film CdS layers grown by Chemical Bath Deposition. CdS films, < 100 nm thickness, were deposited on both O2/Ar plasma cleaned and conventionally cleaned substrates. We show that the O2 /Ar plasma treatment of the TEC15 substrate reduced the water contact angle from ~55º to less than 12º indicating a substantial increase in the surface energy. The CdS deposited on the plasma treated TEC 15 was pinhole free, very smooth and homogenous in morphology and composition. Scanning electron microscopy images show that the O2/Ar plasma treatment is effective in increasing film density and grain size. Corresponding spectroscopic ellipsometry measurements show an increase in the refractive index from 2.18 to 2.43 at 550 nm wavelength.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Research Unit

  • Centre for Renewable Energy Systems Technology (CREST)

Citation

LISCO, F. ... et al, 2014. Pinhole free thin film CdS deposited by chemical bath using a substrate reactive plasma treatment. Journal of Renewable and Sustainable Energy, 6, 011202.

Publisher

© AIP

Version

  • VoR (Version of Record)

Publication date

2014

Notes

This article was published in the Journal of Renewable and Sustainable Energy [© 2014 American Institute of Physics]. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. It may be found at: http://dx.doi.org/10.1063/1.4828362

ISSN

1941-7012

Language

  • en

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