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The effect of collector doping on the high-frequency generation in strongly coupled semiconductor superlattice
journal contribution
posted on 2015-05-18, 15:24 authored by V.A. Maksimenko, V.V. Makarov, Alexey A. Koronovskii, Kirill Alekseev, Alexander BalanovAlexander Balanov, Alexander E. HramovThis letter focuses on the analysis of the spatio-temporal dynamics of charge domains in strongly coupled semiconductor superlattices with the Ohmic emitter and collector contacts. Our numerical simulations, based on the semiclassical approximation of the electron transport, show that the collector doping can dramatically affect the charge dynamics in the semiconductor structure and, therefore, the output AC power. We demonstrate that the appropriately chosen doping of the collector contacts can considerably increase the power of the generated signal.
History
School
- Science
Department
- Physics
Published in
EPLVolume
109Issue
4Citation
MAKSIMENKO, V.A. ... et al, 2015. The effect of collector doping on the high-frequency generation in strongly coupled semiconductor superlattice. EPL, 109 (4), 47007.Publisher
IOP Publishing (© EPLA)Version
- NA (Not Applicable or Unknown)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/Publication date
2015Notes
This paper is closed access until 4th March 2016.ISSN
0295-5075eISSN
1286-4854Publisher version
Language
- en