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Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN–AlN buffer layer
journal contribution
posted on 2016-02-09, 09:58 authored by G.P. Dimitrakopulos, T. Kehagias, A. Ajagunna, J. Kioseoglou, Danis Kerasiotis, G. Nouet, A.P. Vajpeyi, T. KarakostasThe structural properties of 2 mm thick N-face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the
initial deposition of 20 nm AlN and 40 nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited the propagation of threading dislocations (TDs). Dislocation annihilation interactions
occurred in the first ~200 nm of the InN film and reduced the TD density. However, the density of screw and mixed type TDs was four times higher than edge type ones. This
was attributed to the observed GaN/InN interfacial roughness, which was introduced by terminating TDs from the GaN/AlN buffer layer. Strain measurements showed that the InN film, as well as both buffer layers, was relaxed.
Funding
This work was supported under MRTN-CT-2004-005583 (PARSEM).
History
School
- Mechanical, Electrical and Manufacturing Engineering
Published in
Phys. Status Solidi ACitation
DIMITRAKOPULOS, G.P. ...et al., 2010. Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN–AlN buffer layer. Physica Status Solidi(A), 207(5), pp. 1074–1078.Publisher
© WileyVersion
- VoR (Version of Record)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/Publication date
2010Notes
This paper is in closed access.ISSN
1862-6300eISSN
1862-6319Publisher version
Language
- en