The growth, structure and electrical properties of PVD deposited thin films and nanostructures of bismuth and antimony

The electrical and structural properties of thin film bismuth deposited under various growth conditions, onto substrates of glass, silicon and gallium arsenide have been investigated. These have been analysed by four point probe measurements, X-ray diffraction and by direct SEM and FIB imaging. The systematic investigation of the affect of growth conditions led to the discovery of the prolific growth of bismuth nanowires protruding from the surface to a length of 100 μm. This thesis explores some of the process conditions of sputtered and evaporated bismuth [... continued].