Thesis-1989-Mulyadi.pdf (4.91 MB)
The preparation and properties of ITO/tin/silicon solar cells
thesis
posted on 2012-11-01, 11:02 authored by Rachmat MulyadiTransparent semiconducting oxide films of ITO have been
deposited using screen printing techniques for fabricating
heterostructure solar cells. The ITO material used is a readymade
combination of organometallic compounds of indium and tin,
dissolved in a suitable organic vehicle to make a screenprintable
ink or paste. The paste is then printed onto substrates
in the desired configurations.
The effect of various firing temperatures, from 450°C to
650 °c, on the film properties were observed. The sheet
resistances, Ra, changed as the firing temperature varied. Ra
values could be decreased by annealing the films in an inert gas
or in vacuum conditions. An annealing temperature of 300°C
seemed to be optimum for annealing the ITO films. This decreased
the sheet resistance by a factor of more than ten. The lowest
sheet resistance of the ITO films was about 290 n/sq, measured
during annealing under vacuum conditions at a temperature of 300
°C. This gradually increased up to about 1 Kn/sq after the film
was aged for a few days in a laboratory atmosphere.
The solar cell structures of ITO/p-Si and ITO/Sn/p-Si were
made in this research. The first structure suffered from an
excessive oxide interfacial layer thickness and it was abandoned.
The second structure was then made to overcome the problems
resulting from the interfacial oxide. The Sn layer was produced
by using evaporation prior to the screen printing of ITO. The
thickness of the Sn layer was about 100 nm. After evaporation,
screen printing methods were used to complete the heterostructure
solar cell. The best typical values of these cells are, open
circuit voltage, V~= 0.360 Volt, short circuit current density,
Jsc= 16.4 mA/cm2 with fill factor, FF = 0.34 and efficiency, 1) =
2.5% under 80 mW/cm2 simulated illumination, where this
illumination is equivalent to air mass 2, (AM2).
History
School
- Mechanical, Electrical and Manufacturing Engineering
Publisher
© Rachmat MulyadiPublication date
1989Notes
A Doctoral Thesis. Submitted in partial fulfilment of the requirements for the award of Doctor of Philosophy of Loughborough University.EThOS Persistent ID
uk.bl.ethos.235650Language
- en