Thesis-1990-Franklin.pdf (47.86 MB)
Electrical overstress failure in GaAs MESFET structures
thesis
posted on 2012-11-26, 12:41 authored by Andrew J. FranklinAn experimental and theoretical analysis has been carried out into the
effects of electrostatic discharge and constant power electrical overstress in GaAs
MES structures.
An experimental system has been set up to measure the electrical and
physical characteristics of such devices when subject to electrical overstress. This
system includes computer controlled equipment to analyse the electrical failure
waveforms.
The results from the experimental study have been analysed to establish
any patterns which characterise ESD breakdown. Using a new thermal
breakdown model, analytical predictions of the power required to degrade these
devices, for both constant power, and electrostatic discharge breakdown, have
been carried out.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Publisher
© A.J. FranklinPublication date
1990Notes
A Doctoral Thesis. Submitted in partial fulfilment of the requirements for the award of Doctor of Philosophy of Loughborough University.Language
- en