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Microstructure-based multiphysics modeling for semiconductor integration and packaging
journal contribution
posted on 2014-10-15, 08:57 authored by Zhiheng Huang, Hua Xiong, Zhiyong Wu, Paul ConwayPaul Conway, Hugh Davies, Alan Dinsdale, Yunfei En, Qingfeng ZengSemiconductor technology and packaging is
advancing rapidly toward system integration where the
packaging is co-designed and co-manufactured along with
the wafer fabrication. However, materials issues, in particular
the mesoscale microstructure, have to date been
excluded from the integrated product design cycle of
electronic packaging due to the myriad of materials used
and the complex nature of the material phenomena that
require a multiphysics approach to describe. In the context
of the materials genome initiative, we present an overview
of a series of studies that aim to establish the linkages
between the material microstructure and its responses by
considering the multiple perspectives of the various multiphysics
fields. The microstructure was predicted using
thermodynamic calculations, sharp interface kinetic models,
phase field, and phase field crystal modeling
techniques. Based on the predicted mesoscale microstructure,
linear elastic mechanical analyses and electromigration
simulations on the ultrafine interconnects were
performed. The microstructural index extracted by a
method based on singular value decomposition exhibits a
monotonous decrease with an increase in the interconnect
size. An artificial neural network-based fitting revealed a
nonlinear relationship between the microstructure index
and the average von Mises stress in the ultrafine interconnects.
Future work to address the randomness of
microstructure and the resulting scatter in the reliability is
discussed in this study.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Published in
CHINESE SCIENCE BULLETINVolume
59Issue
15Pages
1696 - 1708 (13)Citation
HUANG, Z. ... et al, 2014. Microstructure-based multiphysics modeling for semiconductor integration and packaging. Chinese Science Bulletin, 59 (15), pp.1696-1708.Publisher
© Science China Press and SpringerVersion
- NA (Not Applicable or Unknown)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/Publication date
2014ISSN
1001-6538Publisher version
Language
- en