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Orientation dependence of dielectric and relaxor behaviour in Aurivillius phase BaBi2Nb2O9 ceramics prepared by spark plasma sintering
journal contribution
posted on 2015-06-08, 13:44 authored by Haixue Yan, Hongtao ZhangHongtao Zhang, Rick Ubic, Michael J. Reece, Jing Liu, Zhijian ShenGrain-oriented Aurivillius phase BaBi2Nb2
O9 ceramics were fabricated using Spark Plasma Sintering
(SPS). Their relaxor behaviour was confirmed by
a strong frequency dispersion of the dielectric response.
The dielectric behaviour has been fitted using different
relaxor models. The relaxor parameters are isotropic,
while the dielectric constants are highly anisotropic. The
piezoelectric constant d33 is zero perpendicular and
parallel to the hot pressing direction, and the P–E response
is dominated by losses. The inability to pole the
samples at room temperature is consistent with the Tf
temperature (~115 K) estimated from fitting the experimental
data to the Vogel–Fulcher model. This suggests
that it may be possible to observe piezoelectric and
ferroelectric properties at very low temperatures.
History
School
- Aeronautical, Automotive, Chemical and Materials Engineering
Department
- Materials
Published in
Journal of Materials Science: Materials in ElectronicsCitation
YAN, H. ... et al, 2006. Orientation dependence of dielectric and relaxor behaviour in Aurivillius phase BaBi2Nb2O9 ceramics prepared by spark plasma sintering. Journal of Materials Science: Materials in Electronics, 17 (9), pp.657-661Publisher
© Springer VerlagVersion
- NA (Not Applicable or Unknown)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/Publication date
2006Notes
This paper is closed access. The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-006-0017-0ISBN
0957-4522eISSN
1573-482XPublisher version
Language
- en