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Bidirectional electromigration failure
journal contribution
posted on 2015-06-12, 08:13 authored by M.K. Lim, Vassilios Chouliaras, C.L. Gan, Vincent DwyerPulsed bidirectional currents in copper interconnect can cause electromigration (EM) –induced cyclic void behaviour. Cycles of void nucleation, growth, shrinkage and healing may be seen in the time variation of a line’s resistance profile. In practice each cycle appears to create some net effect so that, eventually, the net effect of many cycles adds up to the failure criterion. We seek here to investigate whether the Stress Evolutional Model of Korhonen et al. [1] is capable of describing the net effect of a voiding cycle.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Published in
MICROELECTRONICS RELIABILITYVolume
53Issue
9-11Pages
1261 - 1265 (5)Citation
LIM, M.K. et al., 2013. Bidirectional electromigration failure. Microelectronics Reliability, 53 (9-11), pp. 1261 - 1265Publisher
© Elsevier LtdVersion
- VoR (Version of Record)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/Publication date
2013Notes
This article is in closed access.ISSN
0026-2714Publisher version
Language
- en