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Bound clusters and pseudogap transitions in layered high-Tc superconductors

journal contribution
posted on 2015-06-30, 12:32 authored by M. Saarela, Feodor Kusmartsev
We show that negatively charged dopant ions in hole-doped, layered, high-Tc superconductors induce at low doping bound clusters of four holes in CuO layers. This phenomenon requires double degeneracy of the hole band provided by the anti-Jahn-Teller effect, where dopant ions push apical oxygen ions into their symmetry positions and release holes from Copper atoms. Experimentally, that is seen as nanoscale inhomogeneity in the pseudogap region. The broad pseudogap transition contains two separate transitions. We connect the higher temperature transition to unbinding of clustered holes out of the spin-singlet state in the CuO plane. The lower temperature transition removes directional stripy order of these dipolar clusters, and the bosonic, spin-zero band disappears. We report results on energetics of the cluster formation and fit the density parameter rs and dielectric constant to Hall measurements. Our model leads to the quantum critical point at doping 0.2 where bound clusters disappear at zero temperature.

Funding

We thank NanoSc-Cost Action MP1201 for financial support

History

School

  • Science

Department

  • Physics

Published in

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM

Volume

28

Issue

4

Pages

1337 - 1341 (5)

Citation

SAARELA, M. and KUSMARTSEV, F.V., 2015. Bound clusters and pseudogap transitions in layered high-Tc superconductors. Journal of Superconductivity and Novel Magnetism, 28 (4), pp. 1337 - 1341.

Publisher

© Springer Science+Business Media

Version

  • VoR (Version of Record)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/

Publication date

2015

Notes

This article is closed access.

ISSN

1557-1939

Language

  • en