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Mesoscopic resistive switch: non-volatility, hysteresis and negative differential resistance
journal contribution
posted on 2015-08-19, 15:57 authored by Sergey SavelievSergey Saveliev, Fabio Marchesoni, A.M. BratkovskyWe show how a simple model nanoswitch can perform as a memory resistor. Its resistance is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the presence of Joule’s heat dissipation. In the case of a single potential minimum, we observe hysteresis of the resistance at finite applied currents and negative differential resistance. For two (or more) minima the switching mechanism is non-volatile, meaning that the memristor can switch to a resistive state of choice and stay there. Moreover, the noise spectra of the switch exhibit 1/f2 → 1/f crossover, in agreement with recent experimental results.
Funding
S.E.S. acknowledges support from The Leverhulme Trust and Ministry of Science of Montenegro, under Contract No. 01-682; F.M. acknowledges support from the European Commission, Grant No. 256959 (NanoPower).
History
School
- Science
Department
- Physics
Published in
THE EUROPEAN PHYSICAL JOURNAL BVolume
86Pages
501 - ?Citation
SAVEL'EV, S., MARCHESONI, F. and BRATKOVSKY, A.M., 2013. Mesoscopic resistive switch: non-volatility, hysteresis and negative differential resistance. European Physical Journal B, 86, 501.Publisher
© EDP Sciences, Societ`a Italiana di Fisica, Springer-VerlagVersion
- VoR (Version of Record)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/Publication date
2013Notes
This item is closed access.ISSN
1434-6028Publisher version
Language
- en