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Preparation of silicon carbide by electrospraying of a polymeric precursor
journal contribution
posted on 2016-09-12, 11:56 authored by Dmitry A. Grigoriev, Mohan J. Edirisinghe, Xujin BaoXujin Bao, Julian R.G. Evans, Zofia B. LuklinskaSilicon carbide (SiC) coatings and films have been prepared for the first time
by electrostatic atomization of a solution of a polymeric precursor and deposition
on to alumina and zirconia substrates. The deposits were heated to 13008C prior
to their examination by X-ray energy-dispersive spectra and selected-area
diffraction in scanning and transmission electron microscopes. The results show
that these coatings and films are crystalline and probably consist of co-existing a-
SiC and b-SiC phases.
Funding
We thank the Royal Society of the UK for funding electrostatic atomisation research at Queen Mary, University of London, by providing an equipment grant to Professor Edirisinghe and a visiting post-doctoral fellowship to Dr Grigoriev.
History
School
- Aeronautical, Automotive, Chemical and Materials Engineering
Department
- Materials
Published in
Phil. Mag. Lett.Volume
81Pages
285 - 291Citation
GRIGORIEV, D. ... et al., 2001. Preparation of silicon carbide by electrospraying of a polymeric precursor. Philosophical Magazine Letters, 81 (4), pp.285-291.Publisher
© Taylor & FrancisVersion
- VoR (Version of Record)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/Publication date
2001Notes
Closed access.ISSN
0950-0839eISSN
1362-3036Publisher version
Language
- en
