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Solution processing of CuIn(S,Se)2 and Cu(In,Ga)(S,Se)2 thin film solar cells using metal chalcogenide precursors
journal contribution
posted on 2016-10-13, 12:41 authored by Nayia Arnou, Carl Cooper, Sona Ulicna, Ali AbbasAli Abbas, Alex Eeles, Lewis Wright, Andrei MalkovAndrei Malkov, Michael WallsMichael Walls, Jake BowersJake BowersIn order to realize the true low cost potential of Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells, high performance needs to be combined with simple and easily controllable atmospheric-based deposition processes. A molecular solution-based approach for CIGS deposition is proposed, using metal chalcogenide precursors dissolved in an amine-thiol solvent combination. CIGS thin films were sprayed with varying Ga content and the sprayed films were incorporated into solar cells. The effect of the Ga content on the material and device properties is investigated. A champion power conversion efficiency of 9.8% (active area) was achieved, which highlights the potential of this methodology.
Funding
The authors would like to acknowledge EPSRC Supergen SuperSolar Hub for funding to support this project (EP/N508457/1, EP/J017361/1). The top contact grids and AR coating were deposited at Nanoco Technologies plc (UK).
History
School
- Science
Department
- Chemistry
Published in
Thin Solid FilmsCitation
ARNOU, P. ... et al., 2017. Solution processing of CuIn(S,Se)2 and Cu(In,Ga)(S,Se)2 thin film solar cells using metal chalcogenide precursors. Thin Solid Films, 633, pp. 76-80.Publisher
© The Authors. Published by Elsevier B.VVersion
- VoR (Version of Record)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution 4.0 International (CC BY 4.0) licence. Full details of this licence are available at: http://creativecommons.org/licenses/ by/4.0/Acceptance date
2016-10-04Publication date
2017Notes
This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).ISSN
0040-6090Publisher version
Language
- en