Photoluminescence imaging analysis of doping in thin film CdS and CdSCdTe devices .pdf (316.95 kB)
Photoluminescence imaging analysis of doping in thin film CdS and CdS/CdTe devices
conference contribution
posted on 2017-10-23, 10:38 authored by Christos Potamialis, Fabiana Lisco, Bianca Maniscalco, Mustafa Togay, Ali AbbasAli Abbas, Martin BlissMartin Bliss, Jake BowersJake Bowers, Michael WallsMichael Walls, I. Rimmaudo, R. Mis Fernandez, V. Rejon, J.L. PenaThe use of photoluminescence (PL) imaging analysis to assess the effectiveness of the passivation treatment due to the presence of chlorine in CdS thin films has been investigated. In this work, we show that the chlorine doping effect in the CdS window layer can be detected by PL imaging analysis, due to the formation of a defect complex of sulfur vacancy and ClS (VS-ClS) and complexes between halogen ions and cadmium vacancies (VCd-ClS). CdTe devices with differently doped CdS layers were investigated. PL imaging, TEM, IV performance indicators and EQE analysis were performed to understand the effect of the different dopants on the electrical performances of CdTe devices.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Published in
44th IEEE Photovoltaic Specialist ConferenceCitation
POTAMIALIS, C. ...et al., 2017. Photoluminescence imaging analysis of doping in thin film CdS and CdS/CdTe devices. Presented at the 2017 IEEE 44th. Photovoltaic Specialists Conference (PVSC), Washington, D.C., June 25-30th, pp. 2457-2461.Publisher
IEEEVersion
- AM (Accepted Manuscript)
Acceptance date
2017-06-23Publication date
2017Notes
Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.ISBN
9781509056057Publisher version
Language
- en