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Seasonal performance of a-Si single- and multijunction modules in two locations
conference contribution
posted on 2011-03-08, 16:23 authored by Ralph Gottschalg, J.A. del Cueto, Tom BettsTom Betts, David InfieldModule performance data collected at two sites are
analyzed in order to identify the respective magnitudes of
seasonal annealing and degradation in comparison to
spectral effects. It is demonstrated in this paper that at
one site (Loughborough, UK) the spectrum dominates
and very little seasonal annealing is observed. In
contrast, at the other site (Golden, US), half of the
seasonal variation can be attributed to spectral changes
while the other half must be attributed to thermal
annealing of defects. Differences between multi-junction
categories are investigated and it is shown that singlejunction
devices exhibit a greater seasonal annealing
than multi-junctions, while the latter tend to be more
influenced by spectral effects.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Research Unit
- Centre for Renewable Energy Systems Technology (CREST)
Citation
GOTTSCHALG, R. ... et al, 2005. Seasonal performance of a-Si single- and multijunction modules in two locations. IN: Conference Record of the 31st IEEE Photovoltaic Specialists Conference 2005, Lake Buena Vista, USA, 3rd-7th January, pp. 1484-1487.Publisher
© IEEEVersion
- VoR (Version of Record)
Publication date
2005Notes
This conference paper [© IEEE] is also available at: http://dx.doi.org/10.1109/PVSC.2005.1488423. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.ISBN
0780387074ISSN
0160-8371Publisher version
Language
- en
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