The electrical and structural properties of thin film bismuth deposited under
various growth conditions, onto substrates of glass, silicon and gallium arsenide
have been investigated. These have been analysed by four point probe
measurements, X-ray diffraction and by direct SEM and FIB imaging. The
systematic investigation of the affect of growth conditions led to the discovery of
the prolific growth of bismuth nanowires protruding from the surface to a length
of 100 μm.
This thesis explores some of the process conditions of sputtered and
evaporated bismuth [... continued].
A Doctoral Thesis. Submitted in partial fulfilment of the requirements for the award of Doctor of Philosophy of Loughborough University.