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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/10939

Title: Diffusivity variation in electromigration failure
Authors: Dwyer, Vincent M.
Issue Date: 2012
Citation: DWYER, V.M., 2012. Diffusivity variation in electromigration failure. Microelectronics Reliability, 52 (9-10), Special Issue 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, pp. 1960 - 1965.
Abstract: Electromigration driven void dynamics plays an important role in the reliability of copper interconnects; a proper understanding of which is made more difficult due to local variations in line microstructure. In simulations, the parameter incorporating these variations best is the effective atomic diffusivity Deff which is sensitive to grain size and orientation, interface layer thickness, etc. We examine a number of experimental results and conclude that, to explain observations using current theoretical models, Deff values must vary significantly along the interconnect, and that such variations are enough to yield encouraging simulations of resistance variations under bidirectional stress.
Description: This article was published in the journal, Microelectronics Reliability [© Elsevier] and the definitive version is available at: http://dx.doi.org/10.1016/j.microrel.2012.06.057
Version: Accepted for publication
DOI: 10.1016/j.microrel.2012.06.057
URI: https://dspace.lboro.ac.uk/2134/10939
Publisher Link: http://dx.doi.org/10.1016/j.microrel.2012.06.057
ISSN: 0026-2714
Appears in Collections:Published Articles (Electronic, Electrical and Systems Engineering)

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