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Title: Molecular dynamics simulations of oxide memristors: crystal field effects
Authors: Savel'ev, Sergey
Alexandrov, A.S.
Bratkovsky, A.M.
Williams, R.S.
Issue Date: 2011
Publisher: © American Institute of Physics
Citation: SAVEL'EV, S. ... et al., 2011. Molecular dynamics simulations of oxide memristors: crystal field effects. Applied Physics Letters, 99 (5), 053108, 3pp.
Abstract: We present molecular-dynamic simulations of memory resistors (memristors) including the crystal field effects on mobile ionic species such as oxygen vacancies appearing during operation of the device. Vacancy distributions show different patterns depending on the ratio of a spatial period of the crystal field to a characteristic radius of the vacancy-vacancy interaction. There are signatures of the orientational order and of spatial voids in the vacancy distributions for some crystal field potentials. The crystal field stabilizes the patterns after they are formed, resulting in a non-volatile switching of the simulated devices.
Description: This article was published in the journal, Applied Physics Letters [© American Institute of Physics] and may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The article may be found at: http://dx.doi.org/10.1063/1.3622665
Version: Published
DOI: 10.1063/1.3622665
URI: https://dspace.lboro.ac.uk/2134/12718
Publisher Link: http://dx.doi.org/10.1063/1.3622665
ISSN: 0003-6951
Appears in Collections:Published Articles (Physics)

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