Loughborough University
Leicestershire, UK
LE11 3TU
+44 (0)1509 263171
Loughborough University

Loughborough University Institutional Repository

Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/12781

Title: Geometrically enhanced extraordinary magnetoresistance in semiconductor-metal hybrids
Authors: Hewett, Thomas H.
Kusmartsev, F.V.
Issue Date: 2010
Publisher: © The American Physical Society
Citation: HEWETT, T.H. and KUSMARTSEV, F.V., 2010. Geometrically enhanced extraordinary magnetoresistance in semiconductor-metal hybrids. Physical Review B, 82 (212404), 4pp.
Abstract: Extraordinary magnetoresistance (EMR) arises in hybrid systems consisting of semiconducting material with an embedded metallic inclusion. We have investigated such systems with the use of finite-element modeling, with our results showing good agreement to existing experimental data. We show that this effect can be dramatically enhanced by over four orders of magnitude as a result of altering the geometry of the conducting region. The significance of this result lies in its potential application to EMR magnetic field sensors utilizing more familiar semiconducting materials with nonoptimum material parameters, such as silicon. Our model has been extended further with a geometry based on the microstructure of the silver chalcogenides, consisting of a randomly sized and positioned metallic network with interspersed droplets. This model has shown a large and quasilinear magnetoresistance analogous to experimental findings.
Version: Published
DOI: 10.1103/PhysRevB.82.212404
URI: https://dspace.lboro.ac.uk/2134/12781
Publisher Link: http://dx.doi.org/10.1103/PhysRevB.82.212404
ISSN: 1098-0121
Appears in Collections:Published Articles (Physics)

Files associated with this item:

File Description SizeFormat
2010-Hewett-PhysRevB.82.212404.pdfAccepted version232.51 kBAdobe PDFView/Open


SFX Query

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.