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Bipolaron anisotropic flat bands, Hall mobility edge, and metal-semiconductor duality of overdoped high-Tc oxides
journal contribution
posted on 2006-04-27, 13:42 authored by A.S. AlexandrovHole bipolaron band structure with two flat anisotropic bands is derived for oxide superconductors. Strong anisotropy leads to one-dimensional localization in a random field which explains the metal-like value of the Hall effect and the semiconductorlike doping dependence of resistivity of overdoped oxides. Doping dependence of Tc and λH(0) as well as the low-temperature dependence of resistivity, of the Hall effect, Hc2(T) and robust features of angle-resolved photoemission spectroscopy of several high-Tc copper oxides are explained.
History
School
- Science
Department
- Physics
Pages
204256 bytesCitation
ALEXANDROV, A.S., 1996. Bipolaron anisotropic flat bands, Hall mobility edge, and metal-semiconductor duality of overdoped high-Tc oxides. Physical Review B, 53(5), pp 2863–2869Publisher
© American Physical SocietyPublication date
1996Notes
This article was published in the journal, Physical Review B [© American Physical Society]. It is also available at: http://link.aps.org/abstract/PRB/v53/p2863.ISSN
1098-0121Language
- en