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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/1313

Title: Bipolaron anisotropic flat bands, Hall mobility edge, and metal-semiconductor duality of overdoped high-Tc oxides
Authors: Alexandrov, A.S.
Issue Date: 1996
Publisher: © American Physical Society
Citation: ALEXANDROV, A.S., 1996. Bipolaron anisotropic flat bands, Hall mobility edge, and metal-semiconductor duality of overdoped high-Tc oxides. Physical Review B, 53(5), pp 2863–2869
Abstract: Hole bipolaron band structure with two flat anisotropic bands is derived for oxide superconductors. Strong anisotropy leads to one-dimensional localization in a random field which explains the metal-like value of the Hall effect and the semiconductorlike doping dependence of resistivity of overdoped oxides. Doping dependence of Tc and λH(0) as well as the low-temperature dependence of resistivity, of the Hall effect, Hc2(T) and robust features of angle-resolved photoemission spectroscopy of several high-Tc copper oxides are explained.
Description: This article was published in the journal, Physical Review B [© American Physical Society]. It is also available at: http://link.aps.org/abstract/PRB/v53/p2863.
URI: https://dspace.lboro.ac.uk/2134/1313
ISSN: 1098-0121
Appears in Collections:Published Articles (Physics)

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