The current upsurge in the use of ion beam techniques in the
fabrication of microelectronic devices has meant a greater understanding
of the processes involved.
The physical aspects of this technique have been, and continue to
be, widely researched. However, until recently, little work had been
undertaken into the chemical aspects of sputtering.
The commonly used theories explaining preferential and chemical
sputtering are described together with an overview of the main theories
describing physical sputtering. As an extension to the theories
covering chemical aspects of sputtering, an appendix is included which
covers the commonly available references, up to the end of 1983,
which have included chemical changes associated with sputtering.
The aim of the project was to extend the range of materials which
had been examined, to measure the degree of chemical damage induced by
sputtering. As such, a range of Group I and Group IV salts were studied
and the results presented herein are discussed with reference to
possible mechanisms of dissociation.
A non-destructive surface sensitive analytical technique was
essential to this study and the method chosen was X-ray photoelectron
spectroscopy, of which some of the background theory is also included.
A Master's Thesis. Submitted in partial fulfilment of the requirements for the award of Master of Philosophy of Loughborough University.