Thesis-1985-Saim.pdf (7.24 MB)
A study of thick films of indium-tin-oxide (ITO) and the feasibility of using ITO for fabricating photovoltaic cells
thesis
posted on 2014-02-13, 13:36 authored by Hashim B. SaimThin films of In203-Sn02 transparent semiconducting oxides (ITO)
have been prepared by conventional thick-film method normally employed in
microelectronics technology. When fired at approximately 650 C in a
continuous air flow, a continuous thick-film of the semiconducting oxides
(about 3000~ thick) is obtained. The sheet resistance of the as-deposited
film is about 6kQ/sq. which can be reduced to about 300 Q/sq. upon heat
o -3 treatment at 300 C in a vacuum of 10 -3 torr. A slight increase of the
sheet resistance to about 1 kQ/sq. occurs on ageing at ambient atmospheres
for a few days.
It is thought that the origin of the conductivity in the as-deposited
films is due to the presence of defects resulting from the non-stoichimetric
composition of the material - i.e. oxygen vacancies. and/or intestitial
tin ions. The remarkable increase in conductivity when the sample is
heated in a vacuum is a result of an increase in the amount of native
defects from shallow donor levels in the tin-oxide. At ambient atmosphere,
the film loses tin due to gradual oxidation process which again leads to
an increase in resistivity.
The Hall effects measurements shows that changes due to annealing
are caused primarily by change in mobility, and a slight change in carrier
concentration. Vacuum annealing also eliminates the effects of annealing
in air. This rules out any structural changes in the film due to annealing
Nature of the annealing characteristics shows that the presence of oxygen
is the cause of the changes in electrical properties. Structural studies show that the films are polycrystalline with crystal
sizes of 100-200 R. There is no obvious change in crystal sizes due to
11
annealing process. Electron diffraction studies also show no obvious
change due to the annealing process. This, together with the vacuum
annealing and mobility studies might suggest that the conductivity in the
films is due to non-stoichiometric effects.
Auger electron spectroscopy (which allows accurate compositional
analysis) and in-depth profiling of the elements in the film was carried
out. The studies show that there is a slight increase in the In/O and
Sn/O ratio for the annealed films compared to the as-deposited films. All the samples show light transmissivity in the visible region of
the spectrum. The fundamental absorption edge appears near 3000R which
corresponds to an optical band-gap of ~4.0eV. The fundamental optical
absorption edge shifts slightly towards the lower wavelength for the more
conductive samples. This shift is thought to be due to Burstein shift.
There is no remarkable absorption observed up to about 2pm for the unfired
and unannealed films. For the annealed films however, there is an
increase in absorption as the wavelength increases, possibly due to free
carrier absorption.
Although these results do not indicate conductivity and mobility as
high as that obtained by using thin-film techniques, a feasibility study
has been undertaken to fabricate heterojunction solar cells (HJSC's) of
ITO-SiO -Si (single crystals).
x In this structure, the ITO thick film
acts not only as a conducting surface layer that induces the SIS junction
but also acts as an antireflection coating. The experimental results
on the working cells have shown a V = 400 mV, and J = 0.5 mA/cm2 ,
cc Sc
and efficiency of 2 ~ 0.2% under a total insulation of = 800 W/m. The
dark and illuminated I-V characteristics have been compared with published
SIS solar cell data and attempts have been made to explain the mechanism
of the cells.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Publisher
© Hashim B. SaimPublication date
1985Notes
A Doctoral Thesis. Submitted in partial fulfilment of the requirements for the award of Doctor of Philosophy of Loughborough University.EThOS Persistent ID
uk.bl.ethos.370543Language
- en