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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/14224

Title: Modeling A-Si module ageing using the concept of environmental dose
Authors: Zhu, Jiang
Bliss, Martin
Betts, Thomas R.
Gottschalg, Ralph
Keywords: Amorphous silicon
Environmental dose
Issue Date: 2013
Publisher: © IEEE
Citation: ZHU, J. ... et al., 2013. Modeling A-Si module ageing using the concept of environmental dose. IN: IEEE 39th Photovoltaic Specialists Conference, Tampa, USA, 16-21 June 2013, pp. 1625 - 1630.
Abstract: This paper investigates ageing of a-Si devices using indoor controlled irradiance and temperature stresses testing. Device maximum power degradation is analyzed against the proposed environmental dose, which is derived from the microscopic model of defects generation and annealing of a-Si material. This dose model well describes the ageing behavior for the devices degraded at different conditions of irradiances from 130-500W/m2 and temperatures from 25-85°C. This, thus, enables the comparison study of device ageing under different environmental conditions and allows the attempt to correlate the outdoor environment to indoor performance.
Description: This is a conference paper. The definitive version is available at: http://ieeexplore.ieee.org/ [© IEEE]. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Version: Accepted for publication
DOI: 10.1109/PVSC.2013.6744456
URI: https://dspace.lboro.ac.uk/2134/14224
Publisher Link: http://dx.doi.org/10.1109/PVSC.2013.6744456
Appears in Collections:Conference Papers and Presentations (Mechanical, Electrical and Manufacturing Engineering)

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