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|Title: ||The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering|
|Authors: ||Lisco, Fabiana|
Kaminski, Piotr M.
Bowers, Jake W.
|Keywords: ||Cadmium sulphide|
Chemical bath deposition
Pinhole free films
Pulsed direct-current magnetron sputtering
|Issue Date: ||2015|
|Publisher: ||© The Authors. Published by Elsevier B.V.|
|Citation: ||LISCO, F. ... et al., 2015. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering. Thin Solid Films, 582, pp. 323 - 327.|
|Abstract: ||Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing.|
|Description: ||This is an open access article under the CC BY license
|Sponsor: ||The authors are grateful to the Engineering and Physical Science Research
Council (EPSRC) (EP/J017361/1) for financial assistance under
the Supergen SuperSolar Hub. They are also grateful to the Technology
|Publisher Link: ||http://dx.doi.org/10.1016/j.tsf.2014.11.062|
|Appears in Collections:||Published Articles (CREST)|
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