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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/17529

Title: The effect of collector doping on the high-frequency generation in strongly coupled semiconductor superlattice
Authors: Maksimenko, V.A.
Makarov, V.V.
Koronovskii, Alexey A.
Alekseev, K.N.
Balanov, Alexander G.
Hramov, Alexander E.
Issue Date: 2015
Publisher: IOP Publishing (© EPLA)
Citation: MAKSIMENKO, V.A. ... et al, 2015. The effect of collector doping on the high-frequency generation in strongly coupled semiconductor superlattice. EPL, 109 (4), 47007.
Abstract: This letter focuses on the analysis of the spatio-temporal dynamics of charge domains in strongly coupled semiconductor superlattices with the Ohmic emitter and collector contacts. Our numerical simulations, based on the semiclassical approximation of the electron transport, show that the collector doping can dramatically affect the charge dynamics in the semiconductor structure and, therefore, the output AC power. We demonstrate that the appropriately chosen doping of the collector contacts can considerably increase the power of the generated signal.
Description: This paper is closed access until 4th March 2016.
Version: Closed access
DOI: 10.1209/0295-5075/109/47007
URI: https://dspace.lboro.ac.uk/2134/17529
Publisher Link: http://dx.doi.org/10.1209/0295-5075/109/47007
ISSN: 0295-5075
Appears in Collections:Closed Access (Physics)

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