Passivation of silicon wafers by Silicon Carbide (SiCx) thin.pdf (631.28 kB)
Passivation of silicon wafers by Silicon Carbide (SiCx) thin film grown by sputtering
journal contribution
posted on 2015-05-26, 08:31 authored by Piotr Kaminski, Ali AbbasAli Abbas, Kevin BassKevin Bass, Gianfranco ClaudioGianfranco ClaudioSilicon Carbide films for silicon solar cell application were deposited by means of RF sputtering process. Films were deposited from mixed Silicon – Graphite target onto silicon Cz <100> wafers. Samples were characterized by Photo Conductance Decay (PCD) method to measure the effective lifetime. The thickness and refractive index of the films deposited were measured using a spectroscopic Ellipsometer. X-Ray Diffraction (XRD) was performed to measure the crystallinity of the samples. Results have indicated that the deposited films were mainly amorphous. The crystalline fraction was present in samples with a better passivation level. Results from PCD show that the effective lifetime improved up to 38 μs which corresponds to a Voc=641 mV. Deposition rates up to 30 nm/min were obtained for samples at 0.9 kW bias power.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Published in
EUROPEAN MATERIALS RESEARCH SOCIETY CONFERENCE SYMPOSIUM: ADVANCED INORGANIC MATERIALS AND CONCEPTS FOR PHOTOVOLTAICSVolume
10Pages
? - ? (5)Citation
KAMINSKI, P.M. ... et al, 2011. Passivation of silicon wafers by Silicon Carbide (SiCx) thin film grown by sputtering. Energy Procedia, 10, European Materials Research Society Conference Symposium: Advanced Inorganic Materials and Concepts for Photovoltaics, Nice, France, pp.71-75Publisher
© Elsevier LtdVersion
- VoR (Version of Record)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 Unported (CC BY-NC-ND 3.0) licence. Full details of this licence are available at: http://creativecommons.org/licenses/by-nc-nd/3.0/Publication date
2011Notes
This is an Open Access Article. It is published by Elsevier as Open Access at: http://dx.doi.org/10.1016/j.egypro.2011.10.155ISSN
1876-6102Publisher version
Language
- en