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Title: Passivation of silicon wafers by Silicon Carbide (SiCx) thin film grown by sputtering
Authors: Kaminski, Piotr M.
Abbas, Ali
Bass, Kevin
Claudio, Gianfranco
Keywords: Silicon carbide
Surface passivation
Minority carrier liftime
Issue Date: 2011
Publisher: © Elsevier Ltd
Citation: KAMINSKI, P.M. ... et al, 2011. Passivation of silicon wafers by Silicon Carbide (SiCx) thin film grown by sputtering. Energy Procedia, 10, European Materials Research Society Conference Symposium: Advanced Inorganic Materials and Concepts for Photovoltaics, Nice, France, pp.71-75
Abstract: Silicon Carbide films for silicon solar cell application were deposited by means of RF sputtering process. Films were deposited from mixed Silicon – Graphite target onto silicon Cz <100> wafers. Samples were characterized by Photo Conductance Decay (PCD) method to measure the effective lifetime. The thickness and refractive index of the films deposited were measured using a spectroscopic Ellipsometer. X-Ray Diffraction (XRD) was performed to measure the crystallinity of the samples. Results have indicated that the deposited films were mainly amorphous. The crystalline fraction was present in samples with a better passivation level. Results from PCD show that the effective lifetime improved up to 38 μs which corresponds to a Voc=641 mV. Deposition rates up to 30 nm/min were obtained for samples at 0.9 kW bias power.
Description: This is an Open Access Article. It is published by Elsevier as Open Access at: http://dx.doi.org/10.1016/j.egypro.2011.10.155
Version: Published
DOI: 10.1016/j.egypro.2011.10.155
URI: https://dspace.lboro.ac.uk/2134/17598
Publisher Link: http://dx.doi.org/10.1016/j.egypro.2011.10.155
ISSN: 1876-6102
Appears in Collections:Published Articles (Mechanical, Electrical and Manufacturing Engineering)

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