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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/17771

Title: Effects of lateral resistances in photovoltaic cells and full 2-D parameter extraction for the spatially-resolved models using electroluminescence images
Authors: Wu, Xiaofeng
Bliss, Martin
Betts, Thomas R.
Gottschalg, Ralph
Issue Date: 2015
Publisher: © The Solar Energy Society
Citation: WU, X. ... et al, 2015. Effects of lateral resistances in photovoltaic cells and full 2-D parameter extraction for the spatially-resolved models using electroluminescence images. Hutchins, M. and Cole, A. (eds). 11th Photovoltaic Science, Applications and Technology Conference C97: PVSAT-11, University of Leeds, Leeds, UK, 15th-17th April 2015, pp.61-64
Abstract: This paper investigates the influences of the lateral resistances in photovoltaic (PV) devices, and proposes a method for extracting local electrical parameters of thin-film PV devices based on a 2-D spatially-resolved model utilising electroluminescence (EL) images and 2-D fittings. PV-oriented nodal analysis (PVONA) is used for studying the electrical properties of the devices and for simulations in iterative 2-D fitting processes. It is shown that the effects of the lateral resistances should not be simply replaced by lumped effective resistances. The proposed new method employs firstly the dark-I-V fitting for the junction parameters; and secondly 2-D fitting of EL images taken under varying bias levels, for the internal and lateral series resistances. The method is verified by a case study and demonstrates excellent agreements with measurement data.
Description: This paper is also available online at: http://www.pvsat.org.uk/docs/pvsat11.pdf
Version: Accepted for publication
URI: https://dspace.lboro.ac.uk/2134/17771
Publisher Link: http://www.pvsat.org.uk/docs/pvsat11.pdf
ISBN: 0904963810
Appears in Collections:Conference Papers and Contributions (CREST)
Conference Papers and Contributions (Mechanical, Electrical and Manufacturing Engineering)

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