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Uncertainty in energy yield estimation based on C-Si module roundrobin results.
conference contribution
posted on 2015-06-10, 10:49 authored by Blagovest Mihaylov, Jake BowersJake Bowers, Tom BettsTom Betts, Ralph Gottschalg, T. Krametz, R. Leidl, K.A. Berger, Shokufeh Zamini, N.J.J. Dekker, G. Graditi, F. Roca, M. Pellegrino, G. Flaminio, P. Pugliatti, A. Di Stefano, F. Aleo, G. Gigliucci, W. Ferrara, G. Razongles, J. Merten, A. Pozza, A. Santamaria Lancia, S. Hoffmann, M. Koehl, A. Gerber, J. Noll, F. Paletta, Gabi Friesen, Sebastian DittmannResults of the European FP7 Sophia project roundrobin
of c-Si module power measurements at STC and
low irradiance and temperature coefficients were used to
calculate annual energy yield at four sites. The deviation
in the estimates solely due to the different measurement
results is reported, neglecting the uncertainty in the
meteorological data and losses unrelated to the
performed measurements. While minimising the
deviation in Pmax measurements remains the key
challenge, the low irradiance and temperature
coefficient contributions are shown to be significant.
Propagating the measurement deviation in c-Si module
measurements would suggest that expanded uncertainty
in energy yield due to module characterization alone can
be as high as ±3-4%.
Funding
B. Mihaylov would like to acknowledge his funding through the RCUK Supergen project ‘Supersolar’ [grant no: EP/J017361/1]. This work has been funded by the European FP7 SOPHIA project, grant number: 262533.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Research Unit
- Centre for Renewable Energy Systems Technology (CREST)
Published in
6th World Conference on Photovoltaic Energy ConversionCitation
MIHAYLOV, B.V. ... et al, 2014. Uncertainty in energy yield estimation based on C-Si module roundrobin results. Presented at : The 6th World Conference on Photovoltaic Energy Conversion, 23rd-27th November 2014, Kyoto, Japan.Publisher
Institute of Electrical and Electronics Engineers, Japan Society of Applied Physics and IEEE Electron Devices Society / © IEEEVersion
- AM (Accepted Manuscript)
Publication date
2014Notes
© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Language
- en
Location
KyotoAdministrator link
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