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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/17818

Title: Bidirectional electromigration failure
Authors: Lim, M.K.
Chouliaras, V.A.
Gan, C.L.
Dwyer, Vincent M.
Issue Date: 2013
Publisher: © Elsevier Ltd
Citation: LIM, M.K. et al., 2013. Bidirectional electromigration failure. Microelectronics Reliability, 53 (9-11), pp. 1261 - 1265
Abstract: Pulsed bidirectional currents in copper interconnect can cause electromigration (EM) –induced cyclic void behaviour. Cycles of void nucleation, growth, shrinkage and healing may be seen in the time variation of a line’s resistance profile. In practice each cycle appears to create some net effect so that, eventually, the net effect of many cycles adds up to the failure criterion. We seek here to investigate whether the Stress Evolutional Model of Korhonen et al. [1] is capable of describing the net effect of a voiding cycle.
Description: This article is in closed access.
Version: Published
DOI: 10.1016/j.microrel.2013.07.017
URI: https://dspace.lboro.ac.uk/2134/17818
Publisher Link: http://dx.doi.org/10.1016/j.microrel.2013.07.017
ISSN: 0026-2714
Appears in Collections:Closed Access (Mechanical, Electrical and Manufacturing Engineering)

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