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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/17844

Title: Ageing of amorphous silicon devices in dependence of irradiance dose
Authors: Zhu, Jiang
Bliss, Martin
Betts, Thomas R.
Gottschalg, Ralph
Issue Date: 2011
Publisher: PVSEC
Citation: ZHU, J. ... et al, 2011. Ageing of amorphous silicon devices in dependence of irradiance dose. 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), Japan, 28th November - 2nd December 2011, 2pp.
Abstract: The ageing behaviour of amorphous silicon (a-Si) devices is investigated in dependence of different light and temperature conditions. Eight a-Si mini-modules are illuminated and kept at constant temperature in an environmental chamber. The ageing behaviour is characterised in terms of a temperature-dependent irradiance dose rather than the exposure time or irradiance dependence in order to investigate possible ageing dependencies of environmental strains and to develop models for device long-term degradation.
Description: This is a conference paper.
Version: Accepted for publication
URI: https://dspace.lboro.ac.uk/2134/17844
Appears in Collections:Conference Papers and Presentations (Mechanical, Electrical and Manufacturing Engineering)
Conference Papers and Contributions (CREST)

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