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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/17846

Title: Modelling of realistic annealing behaviour of amorphous silicon photovoltaic devices
Authors: Zhu, Jiang
Bliss, Martin
Betts, Thomas R.
Gottschalg, Ralph
Issue Date: 2013
Publisher: © The Solar Energy Society (UK-ISES)
Citation: ZHU, J. ... et al, 2013. Modelling of realistic annealing behaviour of amorphous silicon photovoltaic devices. IN: Proceedings of the 9th Photovoltaic Science Applications and Technology Conference (PVSAT-9), 10th-12th April 2013, Swansea, Wales, pp. 215-218
Abstract: Long-term degradation and annealing behaviour of a-Si mini-modules is investigated in this paper. Four devices were firstly degraded by light and then annealed in the dark at temperatures ranging from 65-85°C. Dark annealing rates were obtained for each temperature. Further annealing with light bias was carried out for two of the devices in order to study the interaction between the light-induced degradation and thermal annealing process. Results demonstrate that the annealing in the dark is strongly influenced by the operating temperature but also dependent on the history of the devices. Annealing is a self-limiting process and is significantly influenced by the light intensity in the short-term exposure, giving rise for a balance-equation for modelling purposes.
Description: This is a conference paper.
Version: Accepted for publication
URI: https://dspace.lboro.ac.uk/2134/17846
Publisher Link: http://www.uk-ises.org/index.htm
Appears in Collections:Conference Papers and Presentations (Mechanical, Electrical and Manufacturing Engineering)
Conference Papers and Contributions (CREST)

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