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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/18524

Title: Mesoscopic resistive switch: non-volatility, hysteresis and negative differential resistance
Authors: Savel'ev, Sergey
Marchesoni, Fabio
Bratkovsky, A.M.
Issue Date: 2013
Publisher: © EDP Sciences, Societ`a Italiana di Fisica, Springer-Verlag
Citation: SAVEL'EV, S., MARCHESONI, F. and BRATKOVSKY, A.M., 2013. Mesoscopic resistive switch: non-volatility, hysteresis and negative differential resistance. European Physical Journal B, 86, 501.
Abstract: We show how a simple model nanoswitch can perform as a memory resistor. Its resistance is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the presence of Joule’s heat dissipation. In the case of a single potential minimum, we observe hysteresis of the resistance at finite applied currents and negative differential resistance. For two (or more) minima the switching mechanism is non-volatile, meaning that the memristor can switch to a resistive state of choice and stay there. Moreover, the noise spectra of the switch exhibit 1/f2 → 1/f crossover, in agreement with recent experimental results.
Description: This item is closed access.
Sponsor: S.E.S. acknowledges support from The Leverhulme Trust and Ministry of Science of Montenegro, under Contract No. 01-682; F.M. acknowledges support from the European Commission, Grant No. 256959 (NanoPower).
Version: Published
DOI: 10.1140/epjb/e2013-40966-4
URI: https://dspace.lboro.ac.uk/2134/18524
Publisher Link: http://dx.doi.org/10.1140/epjb/e2013-40966-4
ISSN: 1434-6028
Appears in Collections:Closed Access (Physics)

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