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Title: Internal strain analysis of CdTe thin films deposited by pulsed DC magnetron sputtering
Authors: Kaminski, Piotr M.
Abbas, Ali
Chen, C.
Yilmaz, S.
Bittau, Francesco
Bowers, Jake W.
Walls, Michael
Keywords: CdTe
Thin film
Issue Date: 2015
Publisher: © IEEE
Citation: KAMINSKI, P.M. ... et al., 2015. Internal strain analysis of CdTe thin films deposited by pulsed DC magnetron sputtering. IN: Proceedings of the IEEE 42nd Photovoltaic Specialists Conference, New Orleans, USA, 14-19 June 2015, 6pp.
Abstract: Thin film CdTe was deposited by pulsed dc magnetron sputtering. Magnetron sputtering offers significant advantages for the deposition of thin film photovoltaic including low deposition temperatures and excellent coating uniformity. However the films are susceptible to stress due to the relatively high deposition energy. In this study, deposition temperature and argon gas flows have been used to minimize stress in the deposited films. TEM imaging was used to investigate the crystalline structure of the deposited films and XRD was used to measure strain. XRD analysis showed that stress can be minimized by depositing the CdTe thin film at temperatures of approximately 200ºC using relatively high argon gas flows of 60 sccm. Moreover, this increase in substrate temperature has the further advantage of promoting larger grain sizes up to 500nm in the deposited films.
Description: © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Version: Accepted for publication
DOI: 10.1109/PVSC.2015.7356093
URI: https://dspace.lboro.ac.uk/2134/20097
Publisher Link: http://dx.doi.org/10.1109/PVSC.2015.7356093
Appears in Collections:Conference Papers and Contributions (Mechanical, Electrical and Manufacturing Engineering)

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