XRD2015.pdf (1.09 MB)
Internal strain analysis of CdTe thin films deposited by pulsed DC magnetron sputtering
conference contribution
posted on 2016-01-20, 14:46 authored by Piotr Kaminski, Ali AbbasAli Abbas, C. Chen, Sibel Yilmaz, Francesco Bittau, Jake BowersJake Bowers, Michael WallsMichael WallsThin film CdTe was deposited by pulsed dc
magnetron sputtering. Magnetron sputtering offers significant
advantages for the deposition of thin film photovoltaic
including low deposition temperatures and excellent coating
uniformity. However the films are susceptible to stress due to
the relatively high deposition energy. In this study, deposition
temperature and argon gas flows have been used to minimize
stress in the deposited films. TEM imaging was used to
investigate the crystalline structure of the deposited films and
XRD was used to measure strain. XRD analysis showed that
stress can be minimized by depositing the CdTe thin film at
temperatures of approximately 200ºC using relatively high
argon gas flows of 60 sccm. Moreover, this increase in
substrate temperature has the further advantage of promoting
larger grain sizes up to 500nm in the deposited films.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Published in
IEEE 42nd Photovoltaic Specialists ConferencePages
? - ? (6)Citation
KAMINSKI, P.M. ... et al., 2015. Internal strain analysis of CdTe thin films deposited by pulsed DC magnetron sputtering. IN: Proceedings of the IEEE 42nd Photovoltaic Specialists Conference, New Orleans, USA, 14-19 June 2015, 6pp.Publisher
© IEEEVersion
- AM (Accepted Manuscript)
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2015Notes
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Language
- en