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Title: Electron microscopy of InGaN nanopillars spontaneously grown on Si(111) substrates
Authors: Kehagias, T.
Kerasiotis, I.
Vajpeyi, A.P.
Hausler, I.
Neumann, W.
Georgakilas, A.
Dimitrakopulos, G.P.
Komnninou, P.
Issue Date: 2010
Publisher: © Wiley
Citation: KEHAGIAS, T. ...et al., 2010. Electron microscopy of InGaN nanopillars spontaneously grown on Si(111) substrates. Physica Status Solidi(c), 7(5), pp. 1305-1308.
Abstract: The mopholological, structural and chemical properties of InxGa1−xN nanopillars directly grown on Si (111) substrates, by molecular beam epitaxy, were investigated employing transmission electron microscopy related techniques. Single crystalline, single phase nanopillars were observed exhibiting a low density of crystal defects, which contribute to good crystal quality. Initial nanostructures merge through subgrain boundaries to form final nanopillars. Energy dispersive X-ray analysis revealed a very low InN mole fraction near the interface with the substrate, owing to high desorption rates from the elevated growth temperature, and gradually higher In incorporation rates near the tips of the nanopillars. This compositional fluctuation is main- tained due to poor segregation of indium adatoms along the c-axis of the nanopillars towards the Si interface. A second species of long and narrow nanopillars was found In-free.
Description: This paper is in closed access.
Sponsor: Support by the FP7 NMP3-LA-2008 “MORGAN” Grant Agreement 214610 is acknowledged.
Version: Published
DOI: 10.1002/pssc.200983109
URI: https://dspace.lboro.ac.uk/2134/20255
Publisher Link: http://dx.doi.org/10.1002/pssc.200983109
ISSN: 1862-6351
Appears in Collections:Closed Access (Mechanical, Electrical and Manufacturing Engineering)

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