Loughborough University
Leicestershire, UK
LE11 3TU
+44 (0)1509 263171
Loughborough University

Loughborough University Institutional Repository

Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/20261

Title: Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN–AlN buffer layer
Authors: Dimitrakopulos, G.P.
Kehagias, T.
Ajagunna, A.
Kioseoglou, J.
Kerasiotis, I.
Nouet, G.
Vajpeyi, A.P.
Karakostas, T.
Issue Date: 2010
Publisher: © Wiley
Citation: DIMITRAKOPULOS, G.P. ...et al., 2010. Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN–AlN buffer layer. Physica Status Solidi(A), 207(5), pp. 1074–1078.
Abstract: The structural properties of 2 mm thick N-face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20 nm AlN and 40 nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited the propagation of threading dislocations (TDs). Dislocation annihilation interactions occurred in the first ~200 nm of the InN film and reduced the TD density. However, the density of screw and mixed type TDs was four times higher than edge type ones. This was attributed to the observed GaN/InN interfacial roughness, which was introduced by terminating TDs from the GaN/AlN buffer layer. Strain measurements showed that the InN film, as well as both buffer layers, was relaxed.
Description: This paper is in closed access.
Sponsor: This work was supported under MRTN-CT-2004-005583 (PARSEM).
Version: Published
DOI: 10.1002/pssa.200983103
URI: https://dspace.lboro.ac.uk/2134/20261
Publisher Link: http://dx.doi.org/10.1002/pssa.200983103
ISSN: 1862-6300
Appears in Collections:Closed Access (Mechanical, Electrical and Manufacturing Engineering)

Files associated with this item:

File Description SizeFormat
Microstructure_of_N-face_InN_grownon_Si.pdfPublished version649.72 kBAdobe PDFView/Open


SFX Query

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.