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Title: Phonon assisted resonant tunnelling and its phonons control
Authors: Kusmartsev, F.V.
Krevchik, V.D.
Semenov, M.B.
Filatov, D.O.
Shorokhov, A.V.
Bukharaev, A.A.
Dakhnovsky, Y.
Nikolaev, A.V.
Pyataev, N.A.
Zaytsev, R.V.
Krevchik, P.V.
Egorov, I.A.
Yamamoto, K.
Aringazin, A.K.
Issue Date: 2016
Publisher: © Pleiades Publishing, Ltd.
Citation: KUSMARTSEV, F.V. ...et al., 2016. Phonon assisted resonant tunnelling and its phonons control. JETP Letters, In Press.
Abstract: © 2016 Pleiades Publishing, Inc.We observe a series of sharp resonant features in the tunnelling differential conductance of InAs quantum dots. We found that dissipative quantum tunnelling has a strong influence on the operation of nano-devices. Because of such tunnelling the current-voltage characteristics of tunnel contact created between atomic force microscope tip and a surface of InAs/GaAs quantum dots display many interesting peaks. We found that the number, position, and heights of these peaks are associated with the phonon modes involved. To describe the found effect we use a quasi-classical approximation. There the tunnelling current is related to a creation of a dilute instanton-anti-instanton gas. Our experimental data are well described with exactly solvable model where one charged particle is weakly interacting with two promoting phonon modes associated with external medium. We conclude that the characteristics of the tunnel nanoelectronic devices can thus be controlled by a proper choice of phonons existing in materials, which are involved.
Description: This paper is a Russian translation of a paper published in English at http://dx.doi.org/10.1134/S0021364016180016
Version: Accepted for publication
DOI: 10.1134/S0021364016180016
URI: https://dspace.lboro.ac.uk/2134/22814
Publisher Link: http://dx.doi.org/10.1134/S0021364016180016
ISSN: 0021-3640
Appears in Collections:Published Articles (Physics)

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