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|Title: ||Optimising I-V measurements of high capacitance modules using dark impedance measurements|
|Authors: ||Eeles, Alexander|
Betts, Thomas R.
|Keywords: ||High capacitance|
|Issue Date: ||2016|
|Publisher: ||© IEEE|
|Citation: ||EELES, A., GOTTSCHALG, R. and BETTS, T.R., 2016. Optimising I-V measurements of high capacitance modules using dark impedance measurements. Presented at the IEEE 43rd Photovoltaic Specialists Conference (PVSC), Portland, OR, USA, 5th-10th June 2016, pp. 3693-3697.|
|Abstract: ||A method is demonstrated to optimise pulsed IV measurements of high capacitance PV modules, using dark IV and impedance measurements. The impact of capacitance during I-V measurements is minimised by changing the shape of the voltage ramp. The optimisation can be performed simply and automatically for each individual module during the charging period for the simulator. As an additional benefit of this method the extracted C-V profile can be used to estimate the minority carrier lifetime for the module. The system is demonstrated by using a high capacitance n type module, which is successfully measured in a single 10ms illumination pulse.|
|Description: ||© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.|
|Version: ||Accepted for publication|
|Publisher Link: ||http://dx.doi.org/10.1109/PVSC.2016.7750366|
|Appears in Collections:||Conference Papers and Contributions (Mechanical, Electrical and Manufacturing Engineering)|
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