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Title: Optimising I-V measurements of high capacitance modules using dark impedance measurements
Authors: Eeles, Alexander
Gottschalg, Ralph
Betts, Thomas R.
Keywords: High capacitance
High efficiency
I-V
C-V
Performance measurement
Pulsed simulator
Carrier lifetime
Issue Date: 2016
Publisher: © IEEE
Citation: EELES, A., GOTTSCHALG, R. and BETTS, T.R., 2016. Optimising I-V measurements of high capacitance modules using dark impedance measurements. Presented at the IEEE 43rd Photovoltaic Specialists Conference (PVSC), Portland, OR, USA, 5th-10th June 2016, pp. 3693-3697.
Abstract: A method is demonstrated to optimise pulsed IV measurements of high capacitance PV modules, using dark IV and impedance measurements. The impact of capacitance during I-V measurements is minimised by changing the shape of the voltage ramp. The optimisation can be performed simply and automatically for each individual module during the charging period for the simulator. As an additional benefit of this method the extracted C-V profile can be used to estimate the minority carrier lifetime for the module. The system is demonstrated by using a high capacitance n type module, which is successfully measured in a single 10ms illumination pulse.
Description: © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Version: Accepted for publication
DOI: 10.1109/PVSC.2016.7750366
URI: https://dspace.lboro.ac.uk/2134/24051
Publisher Link: http://dx.doi.org/10.1109/PVSC.2016.7750366
ISSN: 0160-8371
Appears in Collections:Conference Papers and Presentations (Mechanical, Electrical and Manufacturing Engineering)

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