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|Title: ||Analysis and comparison of different selenization routes for nanoparticle ink deposited Cu(In1-xGax)(SeyS1-y)2 solar cells|
|Authors: ||Eeles, Alexander|
Bowers, Jake W.
|Issue Date: ||2016|
|Publisher: ||© IEEE|
|Citation: ||EELES, A. ... et al, 2016. Analysis and comparison of different selenization routes for nanoparticle ink deposited Cu(In1-xGax)(SeyS1-y)2 solar cells. Presented at the 43rd IEEE Photovoltaics Specialist Conference (PVSC), Portland, OR, USA, 5th-10th June 2016, pp. 2152-2156.|
|Abstract: ||This paper investigates the effect of using different selenization sources, namely elemental Se and H2Se, on Cu(In1-xGax)(SeyS1-y)2 devices derived from depositions of nanoparticle inks. Nanoparticles used in this synthesis are chalcogenides (e.g. CuInGaS). The effect of the selenization species has a large effect on the performance and electrical properties of these devices. Elemental selenized devices show higher efficiencies (>16%) compared to H2Se processed devices (<12%). Various techniques are used in this study, including Raman spectroscopy, TEM, I-V-T, EQE, admittance spectroscopy and C-V-T to identify the difference in performance between the two selenization methods. Differences are observed in both the bulk and interface properties of the devices.|
|Description: ||© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.|
|Sponsor: ||The authors would like to acknowledge the support of Innovate UK, project number 102235, and the EPSRC (EP/N508457/1) for the funding.|
|Version: ||Accepted for publication|
|Publisher Link: ||http://dx.doi.org/10.1109/PVSC.2016.7750014|
|Appears in Collections:||Conference Papers and Presentations (Mechanical, Electrical and Manufacturing Engineering)|
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