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Title: Development of ZnTe as a back contact material for thin film cadmium telluride solar cells
Authors: Ulicna, Sona
Isherwood, Patrick J.M.
Kaminski, Piotr M.
Walls, Michael
Li, Jiaojiao
Wolden, Colin A.
Keywords: CdTe solar cells
Thin film
Back contact
Cu-doped ZnTe
Pulsed DC magnetron sputtering
Issue Date: 2017
Publisher: Elsevier © The Authors
Citation: ULICNA, S. ... et al, 2017. Development of ZnTe as a back contact material for thin film cadmium telluride solar cells. Vacuum, 139, pp. 159-163.
Abstract: Cadmium telluride (CdTe) is high-efficiency commercialised thin film photovoltaic technology. However, developing a stable low-resistivity back contact to the CdTe solar cells is still an issue. High work function and low level of doping of this material don't allow to create an ohmic contact with metals directly. Copper is commonly used to lower the back contact barrier in CdTe solar cells, but an excessive amount of copper diffusing through the cell is harmful for the device performance and stability. In this work a copper-doped ZnTe (ZnTe:Cu) buffer layer was incorporated in between CdTe and gold metal contact by high-rate pulsed DC magnetron sputtering. The back contact was then activated by rapid thermal processing (RTP) resulting in spectacular improvement in key device performance indicators, open circuit voltage (VOC) and fill factor (FF).
Description: This is an Open Access Article. It is published by Elsevier under the Creative Commons Attribution 4.0 Licence (CC BY). Full details of this licence are available at http://creativecommons.org/licenses/by/4.0/
Sponsor: The authors would like to acknowledge RCUK for providing financial support through the Supergen SuperSolar Hub (EPSRC Grant No. EP/J017361/1).
Version: Published
DOI: 10.1016/j.vacuum.2017.01.001
URI: https://dspace.lboro.ac.uk/2134/24226
Publisher Link: http://dx.doi.org/10.1016/j.vacuum.2017.01.001
ISSN: 0042-207X
Appears in Collections:Published Articles (Mechanical, Electrical and Manufacturing Engineering)

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