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Title: The role of defects in the electrical properties of NbO2 thin film vertical devices
Authors: Joshi, Toyanath
Borisov, Pavel
Lederman, David
Issue Date: 2016
Publisher: © Authors. Published by the American Institute of Physics.
Citation: JOSHI, T., BORISOV, P. and LEDERMAN, D., 2016. The role of defects in the electrical properties of NbO2 thin film vertical devices. AIP Advances, 6 (12), 125006.
Abstract: Epitaxial NbO2 thin films were grown on Si:GaN layers deposited on Al2O3 substrates using pulsed laser deposition. Pulsed current-voltage (IV) curves and self-sustained current oscillations were measured across a 31 nm NbO2 film and compared with a similar device made from polycrystalline NbO2 film grown on TiN-coated SiO2/Si substrate. Crystal quality of the as grown films was determined from x-ray diffractometry, x-ray photoelectron spectroscopy and atomic force microscopy data. The epitaxial film device was found to be more stable than the defect-rich polycrystalline sample in terms of current switching and oscillation behaviors.
Description: This is an Open Access Article. It is published by the American Institute of Physics under the Creative Commons Attribution 4.0 International Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/4.0/
Sponsor: This work was supported in part by FAME, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA (contract # 2013-MA-2382), and the WVU Shared Research Facilities.
Version: Published
DOI: 10.1063/1.4971818
URI: https://dspace.lboro.ac.uk/2134/24345
Publisher Link: http://dx.doi.org/10.1063/1.4971818
Appears in Collections:Published Articles (Physics)

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