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Title: Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots
Authors: Makarovsky, O.
Turyanska, Lyudmila
Mori, Nobuya
Greenaway, M.T.
Eaves, Laurence
Patane, A.
Fromhold, T.M.
Lara-Avila, Samuel
Kubatkin, Sergey
Yakimova, Rositsa
Issue Date: 2017
Publisher: © the Authors. Published by IOP Publishing
Citation: MAKAROVSKY, O. ...et al., 2017. Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots. 2D Materials, 4: 031001.
Abstract: We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatially correlated with defect charges on the SiC-graphene interface, thus enhancing both electron carrier density and mobility. This chargecorrelation model is supported by Monte Carlo simulations of electron transport and used to explain the unexpected 3-fold increase of mobility with increasing electron density. The enhanced carrier concentration and mobility give rise to Shubnikov-de Haas oscillations in the magnetoresistance, which provide an estimate of the electron cyclotron mass in graphene at high densities and Fermi energies up to 1.2 × 1013 cm−2 and 400 meV, respectively.
Description: This is an Open Access Article. It is published by IOP under the Creative Commons Attribution 3.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/
Sponsor: The work is supported by The Leverhulme Trust (grant number RPG-2013-242), the Engineering and Physical Sciences Council (grant number EP/M012700/1), and the EU Graphene Flagship.
Version: Published
DOI: 10.1088/2053-1583/aa76bb
URI: https://dspace.lboro.ac.uk/2134/25573
Publisher Link: http://dx.doi.org/10.1088/2053-1583/aa76bb
ISSN: 2053-1583
Appears in Collections:Published Articles (Physics)

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