+44 (0)1509 263171
Please use this identifier to cite or link to this item:
|Title: ||Control of MoSe2 formation in hydrazine-free solution-processed CIS/CIGS thin film solar cells|
|Authors: ||Ulicna, Sona|
Wright, Lewis D.
Malkov, Andrei V.
Bowers, Jake W.
|Issue Date: ||2017|
|Publisher: ||© IEEE|
|Citation: ||ULICNA, S. ... et al., 2017. Control of MoSe2 formation in hydrazine-free solution-processed CIS/CIGS thin film solar cells. Presented at the IEEE Photovoltaic Specialists Conference (PVSC), Washington, D.C., USA, 25th-30th June 2017.|
|Abstract: ||This study investigated an approach to control the MoSe2 layer formation at the Mo/CIGS interface of hydrazinefree solution-processed CIGS solar cells. The MoSe2 layer thickness reduction was achieved by deposition of a MoNx back contact barrier layer, which effectively acts as a diffusion barrier against selenium (Se). The resulting Mo/MoNx/Mo multilayer was
applied in a CIGS device as the back contact. The electrical performance of this device was compared to our baseline approach with bare Mo as the back contact. The MoSe2 layer formed after selenization was dramatically reduced when the barrier layer was present and the corresponding device exhibited a power conversion efficiency (PCE) of 8.2%. More importantly, the application of the barrier layer as an intermediate layer within the Mo back contact allows for longer, or even multiple
selenization steps. A longer or a multiple selenization was shown to improve the absorber grain growth and consequently result in higher PCEs.|
|Description: ||This paper is closed access until it is published. © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.|
|Sponsor: ||The authors are grateful for funding from the EPSRC (EP/N026438/1) to support this work.|
|Version: ||Accepted for publication|
|Publisher Link: ||http://www.ieee-pvsc.org/PVSC44/|
|Appears in Collections:||Closed Access (Mechanical, Electrical and Manufacturing Engineering)|
Files associated with this item:
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.