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Title: In-situ micro bend testing of SiC and the effects of Ga+ ion damage
Authors: Robertson, Stuart
Doak, Scott
Zhou, Zhaoxia
Wu, Houzheng
Issue Date: 2017
Publisher: © the Authors. Published by IOP Publishing
Citation: ROBERTSON, S. ...et al., 2017. In-situ micro bend testing of SiC and the effects of Ga+ ion damage. Journal of Physics: Conference Series, 902: 012002.
Abstract: The Young’s modulus of 6H single crystal silicon carbide (SiC) was tested with micro cantilevers that had a range of cross-sectional dimensions with surfaces cleaned under different accelerating voltages of Ga+ beam. A clear size effect is seen with Young’s modulus decreasing as the cross-sectional area reduces. One of the possible reasons for such size effect is the Ga+ induced damage on all surfaces of the cantilever. Transmission electron microscopy (TEM) was used to analyse the degree of damage, and the measurements of damage is compared to predictions by SRIM irradiation simulation.
Description: This paper was presented at the EMAG 2017, Manchester, July 3-6th.This is an Open Access Article. It is published by IOP under the Creative Commons Attribution 3.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/
Version: Published version
DOI: 10.1088/1742-6596/902/1/012002
URI: https://dspace.lboro.ac.uk/2134/26029
Publisher Link: https://doi.org/10.1088/1742-6596/902/1/012002
ISSN: 1742-6588
Appears in Collections:Conference Papers and Presentations (Materials)

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