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|Title: ||Variation of Cu content of sprayed Cu(In,Ga)(S,Se)2 solar cells based on a Thiol-Amine solvent mixture|
|Authors: ||Arnou, Panagiota|
Wright, Lewis D.
Malkov, Andrei V.
Bowers, Jake W.
|Issue Date: ||2017|
|Publisher: ||© IEEE|
|Citation: ||ARNOU, P. ... et al., 2017. Variation of Cu content of sprayed Cu(In,Ga)(S,Se)2 solar cells based on a Thiol-Amine solvent mixture. Presented at: IEEE PVSC 44, Washington DC, USA, 25-30 June 2017.|
(CIGS) thin films were formed by
a low cost solution-based approach using metal sulfide
precursors. The stoichiometry of the absorber layer is tailored in
order to improve film morphology and electrical properties.
films were prepared with a varied Cu content
(0.8>y>1.1) and were completed in solar cell devices. The
compositional, structural and electrical properties of the devices
were investigated. Increased Cu content improves lateral
crystallization, but results in the formation of Cu-rich secondary
phases in-between CIGS grain boundaries. Characterization of
the completed devices shows that Cu content has an important
effect on the device electrical properties and the dominant
|Description: ||Closed access until publication. © IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.|
|Sponsor: ||EPSRC grant number EP/N026438/1|
|Version: ||Accepted for publication|
|Publisher Link: ||http://www.ieee-pvsc.org/PVSC44/|
|Appears in Collections:||Closed Access (Mechanical, Electrical and Manufacturing Engineering)|
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