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Title: Variation of Cu content of sprayed Cu(In,Ga)(S,Se)2 solar cells based on a Thiol-Amine solvent mixture
Authors: Arnou, Panagiota
Ulicna, Sona
Eeles, Alexander
Togay, Mustafa
Wright, Lewis D.
Malkov, Andrei V.
Walls, Michael
Bowers, Jake W.
Keywords: CIGS
Low cost
Solar cells
Solution processing
Stoichiometry
Issue Date: 2017
Publisher: © IEEE
Citation: ARNOU, P. ... et al., 2017. Variation of Cu content of sprayed Cu(In,Ga)(S,Se)2 solar cells based on a Thiol-Amine solvent mixture. Presented at: IEEE PVSC 44, Washington DC, USA, 25-30 June 2017.
Abstract: Cu(In,Ga)(S,Se)2 (CIGS) thin films were formed by a low cost solution-based approach using metal sulfide precursors. The stoichiometry of the absorber layer is tailored in order to improve film morphology and electrical properties. Cuy ln0.7Ga0.3Se2 films were prepared with a varied Cu content (0.8>y>1.1) and were completed in solar cell devices. The compositional, structural and electrical properties of the devices were investigated. Increased Cu content improves lateral crystallization, but results in the formation of Cu-rich secondary phases in-between CIGS grain boundaries. Characterization of the completed devices shows that Cu content has an important effect on the device electrical properties and the dominant recombination mechanisms.
Description: Closed access until publication. © IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Sponsor: EPSRC grant number EP/N026438/1
Version: Accepted for publication
URI: https://dspace.lboro.ac.uk/2134/26135
Publisher Link: http://www.ieee-pvsc.org/PVSC44/
Appears in Collections:Closed Access (Mechanical, Electrical and Manufacturing Engineering)

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