Magnesium-doped zinc oxide High resistance transparent layer Thin film Solar cells CdTe
BITTAU, F. ...et al., 2017. Magnesium-doped zinc oxide as a high resistance transparent layer for thin film CdS/CdTe solar cells. Presented at the 2017 IEEE 44th. Photovoltaic Specialists Conference (PVSC), Washington, D.C., June 25-30th.
Magnesium-doped Zinc Oxide (MZO) was used as an alternative high resistance transparent layer for CdS/CdTe thin film solar cells. Thin films of MZO were deposited by RF
magnetron sputtering and deposited on an Indium Tin Oxide contact (ITO). Thin film CdTe devices including a MZO high
resistance transparent layer deposited at above 300◦C yielded a mean efficiency exceeding 10.5 %. This compares with an
efficiency of 8.2 % without the MZO layer. The improvement in efficiency was due to a higher open circuit voltage and fill factor. Lowering the deposition temperature of MZO reduced the performance of the devices.
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This work was supported by the Engineering and Physical Science Research Council (EPSRC) (EP/J017361/1) under the EPSRC Supergen SuperSolar Hub.