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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/27046

Title: Magnesium-doped zinc oxide as a high resistance transparent layer for thin film CdS/CdTe solar cells
Authors: Bittau, Francesco
Artegiani, Elisa
Abbas, Ali
Menossi, Daniele
Romeo, Alessandro
Bowers, Jake W.
Walls, Michael
Keywords: Magnesium-doped zinc oxide
High resistance transparent layer
Thin film
Solar cells
CdTe
Issue Date: 2017
Publisher: IEEE
Citation: BITTAU, F. ...et al., 2017. Magnesium-doped zinc oxide as a high resistance transparent layer for thin film CdS/CdTe solar cells. Presented at the 2017 IEEE 44th. Photovoltaic Specialists Conference (PVSC), Washington, D.C., June 25-30th.
Abstract: Magnesium-doped Zinc Oxide (MZO) was used as an alternative high resistance transparent layer for CdS/CdTe thin film solar cells. Thin films of MZO were deposited by RF magnetron sputtering and deposited on an Indium Tin Oxide contact (ITO). Thin film CdTe devices including a MZO high resistance transparent layer deposited at above 300◦C yielded a mean efficiency exceeding 10.5 %. This compares with an efficiency of 8.2 % without the MZO layer. The improvement in efficiency was due to a higher open circuit voltage and fill factor. Lowering the deposition temperature of MZO reduced the performance of the devices.
Description: This paper is in closed access until it is published.
Sponsor: This work was supported by the Engineering and Physical Science Research Council (EPSRC) (EP/J017361/1) under the EPSRC Supergen SuperSolar Hub.
Version: Accepted for publication
URI: https://dspace.lboro.ac.uk/2134/27046
Publisher Link: http://ieeexplore.ieee.org/Xplore/home.jsp
https://www.ieee-pvsc.org/PVSC44/index.php
Appears in Collections:Closed Access (Mechanical, Electrical and Manufacturing Engineering)

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