PVSC44_F.Bittau_v1.pdf (943.71 kB)
Magnesium-doped zinc oxide as a high resistance transparent layer for thin film CdS/CdTe solar cells
conference contribution
posted on 2017-10-23, 10:21 authored by Francesco Bittau, Elisa Artegiani, Ali AbbasAli Abbas, Daniele Menossi, Alessandro Romeo, Jake BowersJake Bowers, Michael WallsMichael WallsMagnesium-doped Zinc Oxide (MZO) was used as an alternative high resistance transparent layer for CdS/CdTe thin film solar cells. Thin films of MZO were deposited by RF
magnetron sputtering and deposited on an Indium Tin Oxide contact (ITO). Thin film CdTe devices including a MZO high
resistance transparent layer deposited at above 300◦C yielded a mean efficiency exceeding 10.5 %. This compares with an
efficiency of 8.2 % without the MZO layer. The improvement in efficiency was due to a higher open circuit voltage and fill factor. Lowering the deposition temperature of MZO reduced the performance of the devices.
Funding
This work was supported by the Engineering and Physical Science Research Council (EPSRC) (EP/J017361/1) under the EPSRC Supergen SuperSolar Hub.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Published in
2017 IEEE PVSECCitation
BITTAU, F. ...et al., 2017. Magnesium-doped zinc oxide as a high resistance transparent layer for thin film CdS/CdTe solar cells. Presented at the 2017 IEEE 44th. Photovoltaic Specialists Conference (PVSC), Washington, D.C., June 25-30th, pp. 752-756.Publisher
IEEEVersion
- AM (Accepted Manuscript)
Acceptance date
2017-06-19Publication date
2017Notes
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9781509056057Publisher version
Language
- en