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Title: Photoluminescence imaging analysis of doping in thin film CdS and CdS/CdTe devices
Authors: Potamialis, C.
Lisco, Fabiana
Maniscalco, Bianca
Togay, Mustafa
Abbas, Ali
Bliss, Martin
Bowers, Jake W.
Walls, Michael
Rimmaudo, I.
Fernandez, R. Mis
Rejon, V.
Pena, J.L.
Issue Date: 2017
Publisher: IEEE
Citation: POTAMIALIS, C. ...et al., 2017. Photoluminescence imaging analysis of doping in thin film CdS and CdS/CdTe devices. Presented at the 2017 IEEE 44th. Photovoltaic Specialists Conference (PVSC), Washington, D.C., June 25-30th, pp. 2457-2461.
Abstract: The use of photoluminescence (PL) imaging analysis to assess the effectiveness of the passivation treatment due to the presence of chlorine in CdS thin films has been investigated. In this work, we show that the chlorine doping effect in the CdS window layer can be detected by PL imaging analysis, due to the formation of a defect complex of sulfur vacancy and ClS (VS-ClS) and complexes between halogen ions and cadmium vacancies (VCd-ClS). CdTe devices with differently doped CdS layers were investigated. PL imaging, TEM, IV performance indicators and EQE analysis were performed to understand the effect of the different dopants on the electrical performances of CdTe devices.
Description: Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Version: Accepted for publication
DOI: 10.1109/PVSC.2017.8521507
URI: https://dspace.lboro.ac.uk/2134/27047
Publisher Link: https://doi.org/10.1109/PVSC.2017.8521507
https://www.ieee-pvsc.org/PVSC44/index.php
ISBN: 9781509056057
Appears in Collections:Conference Papers and Presentations (Mechanical, Electrical and Manufacturing Engineering)

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