MOSFET devices have, recently, been considered the basic building element
in any electronic IC circuit or system. The great advances achieved by modem
technologies has made it possible to scale-down considerably the MOSFET device
(channel length L smaller than 0.5μm and oxide thickness smaller than 400Å) which
appreciably influences the device performance and its operating parameters. [Continues.]
A Doctoral Thesis. Submitted in partial fulfilment of the requirements for the award of Doctor of Philosophy at Loughborough University.
Saudi Arabia, Government. King Abdulaziz University, Jeddah.