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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/27272

Title: An experimental and theoretical study of the hot-carrier energy distribution in VLSI MOSFETs
Authors: Al-Harbi, Talal S.
Issue Date: 1996
Publisher: © Talal S. Al-Harbi
Abstract: MOSFET devices have, recently, been considered the basic building element in any electronic IC circuit or system. The great advances achieved by modem technologies has made it possible to scale-down considerably the MOSFET device (channel length L smaller than 0.5μm and oxide thickness smaller than 400Å) which appreciably influences the device performance and its operating parameters. [Continues.]
Description: A Doctoral Thesis. Submitted in partial fulfilment of the requirements for the award of Doctor of Philosophy at Loughborough University.
Sponsor: Saudi Arabia, Government. King Abdulaziz University, Jeddah.
URI: https://dspace.lboro.ac.uk/2134/27272
Appears in Collections:PhD Theses (Physics)

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