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|Title: ||Polycrystalline CdSeTe/CdTe absorber cells with 28 mA/cm2 short-circuit current|
|Authors: ||Munshi, Amit|
Kephart, Jason M.
Barth, Kurt L.
Sampath, Walajabad S.
|Issue Date: ||2017|
|Citation: ||MUNSHI, A. ... et al, 2017. Polycrystalline CdSeTe/CdTe absorber cells with 28 mA/cm2 short-circuit current. Presented at the 2017 44th IEEE Photovoltaics Specialist Conference (PVSC), Washington, DC, USA, 25th-30th June 2017.|
|Abstract: ||An 800-nm CdSeTe layer was added to the CdTe absorber used in high-efficiency CdTe cells to increase the current and produce an increase in efficiency. The CdSeTe layer employed had a band gap near 1.41 eV, compared to 1.5 eV for CdTe. This lower band-gap allowed a current increase from approximately 26 to over 28 mA/cm2. Voltage same as earlier demonstrated high efficiency CdTe-only device was maintained. The fill-factor was not significantly affected. Improving the short-circuit current and maintaining the open-circuit voltage lead to device efficiency over 19%. QE implied that the approximately half the current was generated in the CdSeTe layer and half in the CdTe. Cross-section STEM and EDS showed good grain structure throughout and diffusion of Se into the CdTe layer was observed. To the best of authors’ knowledge this is the highest efficiency polycrystalline CdTe photovoltaic device demonstrated amongst universities and national labs.|
|Description: ||Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.|
|Sponsor: ||The CSU authors thank support from NSF’s Accelerating Innovation Research, DOE’s SunShot and NSF’s Industry/University Cooperative Research Center programs. The Loughborough authors are grateful to EPSRC
for funding through the Supergen SuperSolar Hub. Authors gratefully acknowledge help from 5N Plus for providing CdSeTe material for deposition.|
|Version: ||Accepted for publication|
|Publisher Link: ||http://www.ieee-pvsc.org/PVSC44/|
|Appears in Collections:||Conference Papers and Presentations (Mechanical, Electrical and Manufacturing Engineering)|
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