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|Title: ||Polycrystalline CdSeTe/CdTe Absorber Cells With 28 mA/cm2 Short-Circuit Current|
|Authors: ||Munshi, Amit|
Kephart, Jason M.
Barth, Kurt L.
Sampath, Walajabad S.
|Issue Date: ||2018|
|Publisher: ||© IEEE|
|Citation: ||MUNSHI, A. ...et al., 2018. Polycrystalline CdSeTe/CdTe Absorber Cells With 28 mA/cm2 Short-Circuit Current. IEEE Journal of Photovoltaics, 8(1), pp. 310-314.|
|Abstract: ||IEEE An 800 nm CdSeTe layer was added to the CdTe absorber used in high-efficiency CdTe cells to increase the current and produce an increase in efficiency. The CdSeTe layer employed had a band-gap near 1.41 eV, compared with 1.5 eV for CdTe. This lower band-gap enabled a current density increase from approximately 26 to over 28 mA & #x002F;cm2. The open-circuit voltage obtained in the high-efficiency CdTe-only device was maintained and the fill-factor remained close to 80 & #x0025;. Improving the short-circuit current density and maintaining the open-circuit voltage lead to device efficiency over 19 & #x0025;. External quantum efficiency implied that about half the current was generated in the CdSeTe layer and half in the CdTe. Cross-sectional STEM and EDS showed good grain structure throughout. Diffusion of Se into the CdTe layer was observed. This is the highest efficiency polycrystalline CdTe photovoltaic device demonstrated by a university or national laboratory.|
|Description: ||Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.|
|Sponsor: ||The CSU authors thank support from NSF’s Accelerating Innovation Research, DOE’s SunShot and NSF’s Industry/University
Cooperative Research Center programs.
The Loughborough authors are grateful to EPSRC for funding through the Supergen SuperSolar Hub.|
|Version: ||Accepted for publication|
|Publisher Link: ||https://doi.org/10.1109/JPHOTOV.2017.2775139|
|Appears in Collections:||Published Articles (Mechanical, Electrical and Manufacturing Engineering)|
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