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Please use this identifier to cite or link to this item: https://dspace.lboro.ac.uk/2134/33432

Title: Copper-induced recrystallization and interdiffusion of CdTe/ZnTe thin films
Authors: Samoilenko, Yegor
Abbas, Ali
Walls, Michael
Wolden, Colin A.
Issue Date: 2018
Publisher: AIP
Citation: SAMOILENKO, Y. ...et al., 2018. Copper-induced recrystallization and interdiffusion of CdTe/ZnTe thin films. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 36(3): 031201.
Abstract: © 2018 Author(s). ZnTe is commonly employed as a buffer layer between CdTe and the metallization layer at the back contact of state-of-the-art CdTe solar cells. Here, the critical role of Cu in catalyzing recrystallization and interdiffusion between CdTe and ZnTe layers during back contact activation is presented. Several CdTe/ZnTe:Cu thin-film samples were prepared with varying levels of copper loading and annealed as a function of temperature and time. The samples were characterized by x-ray diffractometry, scanning electron microscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy. The results show that stress is present in the as-deposited bilayers and that negligible interdiffusion occurs in the absence of Cu. The presence of Cu facilitates rapid interdiffusion, predominantly via Cd migration into the ZnTe phase. Zn migration into CdTe is limited to areas around defects and grain boundaries. Ternary Cd x Zn 1-x Te interlayers are formed, and the extent of alloy formation ranges from 0.08 < x < 0.5 throughout the whole ZnTe layer. The level of Cu loading controls the composition of the Cu x Te clusters observed, while their size and migration is a function of annealing conditions.
Description: This paper is in closed access until 1st May 2019.
Sponsor: The CSM authors are grateful to the National Science Foundation through award number CBET-1706149.The Loughborough authors are grateful to UKERC for funding this work through the EPSRC Supergen SuperSolar Hub, grants EP/J017361/1 and EP/M014797/1.
Version: Accepted for publication
DOI: 10.1116/1.5023501
URI: https://dspace.lboro.ac.uk/2134/33432
Publisher Link: https://doi.org/10.1116/1.5023501
ISSN: 0734-2101
Appears in Collections:Closed Access (Mechanical, Electrical and Manufacturing Engineering)

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